999久久狠狠免费精品,三级99国产精品久久久,99精品久久久久久人妻精品,免费观看国产成人av片,色综合天天综合网国产人,日本一区二区三区色视频,黄色不卡网站在线观看欧美

FMND1G08U3D-IA_東芯PPI NAND Flash
1Gbit NAND Flash Memory
  • VCC = 1.8/2.7/3.3 Volt core supply voltage for Program, Erase and Read operations
  • PPI NAND Flash
詳細(xì)內(nèi)容


SUMMARY DESCRIPTION

FMND1GXXXXX is a 128Mx8bit with spare 4Mx8(x8),64Mx16bit with spare 2Mx16(x16)bit capacity.The device is offered in 3.3/1.8 Vcc Power Supply,and with x8 and x16 I/O interface.The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 1024 blocks,composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.Program operation allows the 2112-byte page writing in typical 200us and an erase operation can be performed in typical 2 ms on a 128K-byte block.Data in the page can be read out at 25ns cycle time per word(2.7/3.3V version),and at 45ns cycle time per word(1.8V version).The I/O pins serve as the ports for address and data input/output as well as command input.This interface allows a reduced pin count and easy migration towards different densities,without any rearrangement of footprint.Commands,Data and Addresses are synchronously introduced using CE#,WE#,ALE and CLE input pin.

The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition,where required,and internal verification and margining of data.The modify operations can be locked using the WP#input pin.

This device supports ONFI 1.0 specification.

The output pin RB#(open drain buffer)signals the status of the device during each operation.In a system with multiple memories the RB#pins can be connected all together to provide a global status signal.

庄河市| 密云县| 玉溪市| 沛县| 博白县| 龙胜| 榆社县| 安徽省| 隆化县| 绥芬河市| 岳西县| 鲁山县| 思南县| 都匀市| 东乡族自治县| 海宁市| 青阳县| 阿坝县| 贵港市| 衡阳市| 英山县| 阳高县| 吐鲁番市| 辽阳县| 沿河| 水城县| 社旗县| 盖州市| 常德市| 尚志市| 裕民县| 溆浦县| 安塞县| 邛崃市| 长兴县| 新和县| 民权县| 大邑县| 突泉县| 潮州市| 抚宁县|